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1. Identity statement
Reference TypeConference Paper (Conference Proceedings)
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Repositorysid.inpe.br/marciana/2004/01.13.14.25
Last Update2004:03.29.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/01.13.14.25.51
Metadata Last Update2018:06.05.01.20.45 (UTC) administrator
Secondary KeyINPE-10408-PRE/5907
Citation KeyBarretoKullCapp:2003:KiSuMe
TitleKinetic and surface mechanisms to growth of hexagonal boron nitride
FormatOn-line
Year2003
Access Date2024, May 15
Secondary TypePRE CI
Number of Files1
Size164 KiB
2. Context
Author1 Barreto, Patrícia Regina Pereira
2 Kull, Alan E.
3 Cappelli, Mark A.
Resume Identifier1 8JMKD3MGP5W/3C9JJ2S
Group1 LAP-INPE-MCT-BR
Affiliation1 Plasma, Instituto Nacional de Pesquisas Espaciais. Laboratório Associado de
2 University, Mechanical Engineering Department. stanford
Conference NameMat. Res. Soc. Symp.
Date2003)
Pages313-318
Book TitleProceedings
History (UTC)2018-06-05 01:20:45 :: administrator -> marciana :: 2003
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordstecnologia de plasma
plasma technology
AbstractA mechanism is presented for the gas-phase chemistry and surface reactions describing the growth of boron nitride films. The gas phase mechanism includes 33 species and 216 elementary reactions. Rate parameters for 117 elementary reactions were obtained from published experimental/theoretical data and those for the other 99 were determined using transition state theory. The mechanism examined here is an extension and update of a previous mechanism that contained 26 species and 67 elementary reactions. Standard reaction flux/pathway and gradient sensitivity analysis techniques are used to identify important reaction pathways. The calculations were handled through the use of the ChemKin software package. The model was applied to the growth of hexagonal boron nitride in an arcjet plasma source operating on mixture of BF3, H2 and N2. From the growth rate and experimental conditions for such reactors, this work demonstrates that species with mole fractions in the range of 1 10-10 - 2 10-4 (easily generated by gas-phase conditions) can account for the measured growth rate. A comparison of the predicted mole fractions of the gas-phase species present for the experimental residence times with those required to account for the measured film growth rates allows us to identify possible growth precursors. At the experimental settings, it is found that the residence time of the reacting species does not allow the flow to reach the chemical equilibrium, and that many radicals other than the source gases can account for the measured BN growth rate. The gas-phase is shown to be removed from thermodynamic equilibrium. For comparison, the equilibrium mole fractions were also calculated using an available equilibrium chemistry solver, STANJAN. Growth rates of 10-9 to 10-6 kg m-1 s-1 were measured for a wide range of H2, BF3 and NF3 flux. Both the finite-rate kinetics and equilibrium calculations confirm the importance of added hydrogen to facilitate boron nitride condensation from the gas phase. A simple surface mechanism with 7 steps is proposed with rate constants chosen to best fit the experimental growth kinetics. The results of the model, with surface rate coefficients determined from analogous gas-phase reactions, tuned slightly to agree with the experimental growth rates for BFx, x = 1, 2 or 3, as the rate-limiting growth precursor. It is also shown that the hydrogen atom has a great influence in the growth rate and that fluorine atom etches the hBN films.
AreaFISPLASMA
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Kinetic and surface...
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4. Conditions of access and use
data URLhttp://urlib.net/ibi/sid.inpe.br/marciana/2004/01.13.14.25
zipped data URLhttp://urlib.net/zip/sid.inpe.br/marciana/2004/01.13.14.25
Languageen
Target Filekinetic.pdf
User Groupadministrator
Visibilityshown
Copy HolderSID/SCD
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ET2RFS
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.42 1
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Notes(Proc. 750)
Empty Fieldsarchivingpolicy archivist callnumber conferencelocation copyright creatorhistory descriptionlevel dissemination documentstage doi e-mailaddress edition editor electronicmailaddress identifier isbn issn label lineage mark mirrorrepository nextedition numberofvolumes orcid organization parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress readergroup readpermission rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle sponsor subject tertiarymark tertiarytype type url versiontype volume
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